Semiconductor device with semiconductor chip and rewiring layer and method for producing the same

ABSTRACT

The invention relates to a semiconductor device with a semiconductor chip and a rewiring layer, the semiconductor chip being embedded in a housing plastics composition by its rear side contact. The active top side of the semiconductor chip forms a coplanar overall top side with the top side of the housing plastics composition. The rear side contact is led to the overall top side via a flat conductor sheet tape, so that the rear side contact of the semiconductor chip can be accessed from the overall top side.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims priority under 35 USC §119 to German ApplicationNo. DE 103 52 946.2, filed on Nov. 11, 2003, and titled “SemiconductorDevice with Semiconductor Chip and Rewiring Layer and Method forProducing the Same,” the entire contents of which are herebyincorporated by reference.

FIELD OF THE INVENTION

The invention relates to a semiconductor device with a semiconductorchip and a rewiring layer, the semiconductor chip being embedded into aplastic housing composition by its rear side and its edge sides in sucha way that the active top side of the semiconductor chip is arranged incoplanar fashion with respect to a top side of the housing plasticscomposition and forms an overall top side. A packaging of a plurality ofsemiconductor chips into a housing plastics composition with formationof an overall top side is also called “Wafer Level Package” or WLP andforms a composite board or a panel comprising plastics composition andsemiconductor chips which are adapted in their dimensions to asemiconductor wafer.

BACKGROUND

On the coplanar overall top side of such a panel of WLP design, it ispossible to apply a rewiring layer that connects contact areas on thetop side of the semiconductor chip to external contact areas of therewiring layer in a cost-effective manner. However, as yet acost-effective contact system has not been disclosed by means of whichrear side contacts which are not arranged on the overall top side butrather are embedded in the housing plastics composition can also bereached from the rewiring layer or from the overall top side.

SUMMARY OF THE INVENTION

It is an object of the invention to specify a semiconductor device witha semiconductor chip and a rewiring layer in which a rear side contactof the semiconductor chip can be accessed from the rewiring layer.

Another object of the invention is to provide a method which enables asemiconductor device to be produced cost-effectively.

The aforesaid objects are achieved individually and in combination, andit is not intended that the present invention be construed as requiringtwo or more of the objects to be combined unless expressly required bythe claims attached hereto.

In accordance with the present invention, a semiconductor deviceincludes a semiconductor chip and a rewiring layer. The semiconductorchip with its rear side and its edge sides is embedded into a housingplastics composition. The active top side of the semiconductor chip isarranged in coplanar fashion with respect to a top side of the housingplastics composition and forms an overall top side. This overall topside carries a rewiring layer, a flat conductor sheet tape beingarranged within the housing plastics composition and extending from theoverall top side of the semiconductor device to the rear side of thesemiconductor chip. In this configuration, the flat conductor sheet tapeis electrically connected to the rear side of the semiconductor chip.

Flat conductor sheet tapes of this type are used in TAB technology (TapeAutomated Bonding) in order, in central bonding channels of asemiconductor chip, to connect the contact areas (having a size of a fewmicrometers) of an active top side of a semiconductor chip to a rewiringstructure on the active top side of the semiconductor chip. According tothe invention, a flat conductor sheet tape of this type is now used inorder to create an electrical connecting line between a rear side of asemiconductor chip to an overall top side of the semiconductor device.The flat conductor sheet tape may have a flexible, tape-type plasticsheet coated with copper on one side, the copper coating of the flatconductor sheet tape being connected to the rear side contact of thesemiconductor chip and to the rewiring layer on the overall top side ofthe semiconductor device.

A semiconductor device of this type has the advantage that the rear sideof the semiconductor chip can also be electrically contact-connectedfrom the overall top side. Thus, it is possible for a ground potentialnow to be applied to the rear side of the semiconductor chip from theoverall top side or from the rewiring layer without the need to partlyuncover the rear side of the semiconductor chip in the housing plasticscomposition in order to reach the rear side contact. Rather, the flatconductor sheet tape is already concomitantly embedded in the housingplastics composition and produces the desired electrical connecting lineto a rear side contact of the semiconductor chip.

Instead of a flexible, tape-type plastic sheet coated with copper on oneside as flat conductor sheet tape, it is also possible to use a metalsheet. A metal sheet has the advantage over a copper coating that it canbe made thicker and the lead resistance can thus be reduced.

In a further embodiment of the semiconductor device, the flat conductorsheet tape is electrically connected to an external contact of thesemiconductor device via the rewiring layer. For this purpose, therewiring layer has rewiring lines that connect the end of the flatconductor sheet tape which is arranged on the coplanar overall top sideto external contact areas which, for their part, carry externalcontacts. Consequently, the electrical path—from an external contact tothe rear side of the semiconductor chip—comprises the rear side contactof the semiconductor chip, the flat conductor sheet tape, the rewiringline of the rewiring layer, the external contact areas of the rewiringlayer and finally the external contact of the semiconductor device whichis arranged on the external contact areas.

A further embodiment of the semiconductor device has a further, secondsemiconductor chip on the rear side of a first semiconductor chip. Thefurther, second semiconductor chip is arranged with its rear side on therear side of the first semiconductor chip. In this case, the secondsemiconductor chip is completely embedded in the plastic housingcomposition. In order that contact areas of the active top side of thesecond semiconductor chip which are completely embedded in the plasticscomposition are nevertheless reached electrically from the overall topside, flat conductor sheet tapes extend within the housing plasticscomposition from the contact areas on the active top side of the secondsemiconductor chip to the overall top side of the semiconductor device.

Consequently, with the aid of the invention's principle of a new contactsystem, it is also possible to realize a cost-effective stacking ofsemiconductor chips one above the other in a WLP design. Since the newcontact system reaches both the rear side contacts of the semiconductorchips which are buried in the housing plastics composition, and thecontact areas of an active top side of the second stacked semiconductorchip which are embedded in plastics composition, via corresponding flatconductor sheet tapes with the overall top side, it is now possible toapply cost-effectively on the overall top side a rewiring layer viawhich access is possible to all contact areas of the first and secondsemiconductor chips.

In this case, the principle according to the invention can be extendedas desired by further semiconductor chips being stacked one on top ofthe other and being electrically connected to the overall top side viacorrespondingly arranged flat conductor sheet tapes. Such a stackcomprising a plurality of semiconductor chips with flat conductor sheettapes that are led out correspondingly can be embedded in a commonhousing plastics composition.

In another embodiment of the invention, a method for producing a panelwith device positions arranged in rows and/or columns includes thefollowing steps. First, provision is made of an auxiliary carrier, witha single-sided adhesive layer and a plurality of semiconductor devicepositions. On these semiconductor device positions, the active top sidesof semiconductor chips are placed onto the adhesive layer of theauxiliary carrier. Afterward, a flat conductor sheet tape of a flatconductor sheet is fixed on the rear side contact of the semiconductorchip in the device positions. After a bending away of the flat conductorsheet tape with the flat conductor sheet tape being torn away from theflat conductor sheet, the free end of the torn-away flat conductor sheettape is pressed onto the adhesive layer of the auxiliary carrier andfixed there.

A housing plastics composition is then applied to the auxiliary carrier,with embedding of the semiconductor chips and the flat conductor sheettapes. In this case, an overall top side forms on the adhesive layer ofthe auxiliary carrier which, on the one hand, has the active top side ofthe semiconductor chip with corresponding contact areas of thesemiconductor chip and, on the other hand, provides an end of the flatconductor sheet tape in the edge region of the active top side of thesemiconductor chip. Afterward, the auxiliary carrier is removed withformation of a panel with a plurality of device positions.

After the removal of the auxiliary carrier with the adhesive layer ofthe auxiliary carrier, electrical contact connections both to the activetop side of the semiconductor chip and to the rear side of thesemiconductor chip are available on the coplanar top side, comprisinghousing plastics composition and contact areas. Onto this overall topside of the panel, rewiring layers with rewiring structures and externalcontact areas are then applied to the overall top side in the devicepositions. A self-supporting composite body is thus available in theform of a panel or a wafer in WLP technology.

This method has the advantage that it is possible cost-effectively tocreate a contact system for a panel or for a WLP structure in the caseof which it is possible to reach both the contact areas on the activetop side of the semiconductor chips and the rear side contacts of thesemiconductor chips from the overall top side.

A method according to the invention for producing a semiconductor devicefirstly has the abovementioned production steps for producing a paneland then external contacts can be applied to the external contact areasof the rewiring layer. Afterward, the panel is divided into individualsemiconductor devices. This method variant has the advantage that theexternal contacts can still be introduced simultaneously by means of aparallel method for all semiconductor devices in the framework of thepanel.

Another method provides for firstly separating the panel into individualsemiconductor devices and then applying the external contacts to theexternal contact areas of the semiconductor device. This method has theadvantage that external contacts are applied only to such semiconductordevices which have already been tested in terms of their functioning andbeen found to be good prior to the separation of the panel, so that noexternal contacts that do not function are applied on the semiconductorchips.

A further method for producing a panel with stacked semiconductor chipsin the device positions includes, in addition to the method for anindividual semiconductor chip, the following steps. Before thesemiconductor chip is packaged in a housing plastics composition, afurther, second semiconductor chip is applied to the already mountedfirst semiconductor chip with rear side to rear side. Afterward, a flatconductor sheet is then oriented on the active top side of the secondsemiconductor chip and, in this case, at least one flat conductor sheettape is fixed on a corresponding contact area of the active top side ofthe second semiconductor chip. Afterward, the flat conductor sheet tapeis bent away from the top side of the second semiconductor chip in thedirection of the adhesive layer of the auxiliary carrier, the flatconductor sheet tape being deposited and fixed on the adhesive layer.

When the flat conductor sheet tape is deposited, the flat conductorsheet tape is torn away from the flat conductor sheet at a desiredbreaking location provided. Once an electrical connection has thus beeneffected from the active top side of the second semiconductor chip inthe direction of the overall top side to be formed, a plastic housingcomposition may be applied to the auxiliary carrier and, in this case,the semiconductor chips and the flat conductor sheet tapes may beembedded in the plastics composition. Afterward, the auxiliary carrieris removed from the overall top side with formation of the panel with aplurality of device positions. Next, a rewiring layer with a rewiringstructure and external contact areas is applied to the overall top sidein the respective device positions of the panel. As in the case of thefirst embodiment of the invention, the application of the externalcontacts may be applied to the corresponding external contact areas ofthe rewiring layer either before the panel is separated into individualdevices or after the panel is separated into individual devices.

To summarize, it shall be emphasized that, by application of knowntechnologies, such as WLP technology and such as the TAB method,connecting lines are produced from chip rear sides or from active topsides of stacked semiconductor chips to a rewiring plane in a WLPdesign. This affords the advantage that rear side contacts of the devicecan be contact-connected from the overall top side or that stacking ofsemiconductor chips becomes possible even in the case of a WLP device.

When producing a rear side contact, the semiconductor chip to be mountedis applied by its active top side on an auxiliary carrier coated with anadhesive sheet. The semiconductor chip additionally has a rear sidemetallization with which contact can be made. Then, a conductor trackthat is coated or mounted onto a sheet, in the form of a flat conductorsheet tape, is positioned on the rear side metallization and aconductive connection is produced on the chip rear side with theconductor track of the flat conductor sheet tape that is used, by meansof the so-called Tape Automated Bonding method (TAB). Afterward, thesecond end of the conductor track of the flat conductor sheet tape ispressed onto the surface of the adhesive auxiliary carrier until itadheres in a positionally accurate manner on the adhesive side of theauxiliary carrier. The next process steps are effected analogously tothe production of WLP devices. After the application of the housingplastics composition by means of molding and after the removal of theauxiliary carrier, both contacts of the semiconductor chip and thecontact of the rear side of the semiconductor chip are then ready forrewiring at the same level of the coplanar overall top side.

The electrical connection of a stacked semiconductor chip is effectedafter the mounting of a second semiconductor chip on the originalsemiconductor chip by effecting a completely analogous procedure.However, there is situated on the flat conductor sheet not an individualconductor track, like for the rear side contact-connection, but ratheran arrangement of a plurality of flat conductor sheet tapes that isadapted to the contact areas and the functionality of the chip.

The above and still further objects, features and advantages of thepresent invention will become apparent upon consideration of thefollowing detailed description of specific embodiments thereof.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will now be explained in more detail with reference to theaccompanying figures.

FIG. 1 shows a diagrammatic cross section through a semiconductor deviceof a first embodiment of the invention;

FIG. 2 shows a diagrammatic cross section through a semiconductor deviceof a second embodiment of the invention;

FIGS. 3 to 10 show diagrammatic cross sections through components ofsuccessive method steps which occur during the production of thesemiconductor device of the first embodiment of the invention inaccordance with FIG. 1;

FIGS. 11 to 18 show diagrammatic cross sections through components ofsuccessive method steps which are provided during the production of thesemiconductor device of the second embodiment of the invention, inaccordance with FIG. 2.

DETAILED DESCRIPTION

FIG. 1 shows a diagrammatic cross section through a semiconductor device1 of a first embodiment of the invention. The semiconductor device 1 hasan overall top side 11, in which the active top side 8 of asemiconductor chip 2 and the top side 9 of a housing plasticscomposition 7 are oriented in coplanar fashion. There are arranged onthis overall top side 11 not only contact areas 16 of the semiconductorchip 2 but also a contact connection 23, which is connected to a rearside contact 14 of the rear side 4 of the semiconductor chip 2 via aflat conductor sheet tape 12.

Arranged on the overall top side 11 of the semiconductor device 10 is arewiring layer 3 having through contacts 24 to external contact areas 21on which external contacts 13 are arranged. At least one of saidexternal contacts 13 is connected via an external contact area 21 and athrough contact 24 to the contact connection 23 which, for its part, iselectrically connected to the rear side contact 14 of the semiconductorchip 2 via the flat conductor sheet tape 12. The other external contacts13 are connected to the contact areas 16 at the active top side 8 of thesemiconductor chip 2 via corresponding external contact areas 21 andrewiring lines 25 of a rewiring structure 20 in the rewiring layer 3.

The advantages of this embodiment in accordance with FIG. 1 arediscussed extensively above and omitted in order to avoid repetition atthis juncture.

FIG. 2 shows a diagrammatic cross section through a semiconductor device10 of a second embodiment of the invention. Components having functionsidentical to those in FIG. 1 are identified by the same referencesymbols and are not discussed separately.

The semiconductor device 10 of the second embodiment of the inventiondiffers from the semiconductor device 1 in accordance with FIG. 1 by thefact that a further, second semiconductor chip 15 is applied by its rearside 22 on the rear side 4 of a first semiconductor chip 2. The two rearside contacts 14 of these stacked semiconductor chips 2 and 15 lie ontop of one another and are connected via a flat conductor sheet tape 12to a contact connection 23 on the overall top side 11 of thesemiconductor device 10. In addition to this ground potential lineconstituted by the flat conductor sheet tape 12, further flat conductorsheet tapes 12 are arranged in the housing plastics composition 7 whichconnect contact areas 16 of the active top side 17 of the secondsemiconductor chip 15 to contact connections 23 on the overall top side11 of the semiconductor device 10. The rewiring layer 3 is constructedanalogously to the first embodiment of the invention and is notdiscussed separately in order to avoid repetition.

FIGS. 3 to 10 show diagrammatic cross sections through components ofsuccessive method steps during the production of a semiconductor device,in accordance with the first embodiment of the invention according toFIG. 1. Components having functions identical to those in the previousFIG. s are identified by the same reference symbols in FIGS. 3 to 10 andare not discussed separately.

FIG. 3 shows a diagrammatic cross section through an auxiliary carrier18 with an adhesive layer 19. A semiconductor chip 2 is arranged withits active top side 8 and its contact pads 16 on said adhesive layer 19.A rear side metallization, which forms a rear side contact 14, is fittedon the rear side 4 of the semiconductor chip 2. The edge sides 5 and 6are free of any contact-connection. The auxiliary carrier 18 is a planarplastic plate coated with an adhesive, FIG. 3 showing one deviceposition of a plurality of device positions of a panel that are arrangedin rows and/or columns.

FIG. 4 shows a diagrammatic cross section through an auxiliary carrier18 according to FIG. 3, with the semiconductor chip 2 arranged thereon,a flat conductor sheet tape 12 of a flat conductor sheet 28 additionallybeing oriented and positioned on the rear side contact 14 of thesemiconductor chip 2. A desired breaking location 27 is arranged betweenthe flat conductor sheet 28 and the flat conductor sheet tape 12. Inthis embodiment of the invention, the flat conductor sheet tape 12 has acopper- and/or gold-coated plastic sheet that is positioned with itscoated side above the rear side metallization of the rear side contact14 of the semiconductor chip 2. The flat conductor sheet tape 12 mayalso have a structured metal sheet.

FIG. 5 shows a diagrammatic cross section through the auxiliary carrier18 with the semiconductor chip 2 as can be seen in FIG. 4, but a tool 26is additionally applied to an end of the flat conductor sheet tape 12which is positioned on the rear side contact 14 of the semiconductorchip 2. This tool 26 is used to create an electrical connection betweenthe rear side contact 14 and the flat conductor sheet tape 12, forexample by a solderable coating being melted on the areas pressed ontoone another.

FIG. 6 shows a diagrammatic cross section through the auxiliary carrier18 in accordance with FIG. 5 after the tool 26 has been brought to asecond end of the flat conductor sheet tape 12. This second end of theflat conductor sheet tape 12 is arranged in the vicinity of the desiredbreaking location of the flat conductor sheet 28. Through pressure onthe tool 26 in arrow direction A, the flat conductor sheet tape 12 isbent away whilst being torn away from the desired breaking location ofthe flat conductor sheet 28 and pressed onto the adhesive layer 19 ofthe auxiliary carrier 18. This method step creates a contact connection23 on the plane of the adhesive layer 19 for an electrical connection tothe rear side contact 14 of the semiconductor chip 2.

FIG. 7 shows a diagrammatic cross section through the auxiliary carrier18 in accordance with FIG. 6 after the application of a housing plasticscomposition 7, with embedding of the semiconductor chip 2 and the flatconductor sheet tape 12. The housing plastics composition 7 has an epoxyresin filled with particles up to 95% by weight.

FIG. 8 shows a diagrammatic cross section through the housing plasticscomposition 7 in accordance with FIG. 7, after the removal of theauxiliary carrier 18 with adhesive layer 19 shown in FIG. 7. Inaddition, for the further method steps, the housing plastics composition7 with the semiconductor chip 2 has been rotated through 180°, so thatthe overall top side 11 also locally constitutes a top side. The overalltop side 11 is composed of the top side 9 of the housing plasticscomposition 7, furthermore of the contact connection 23 of the flatconductor sheet tape 12, and also of the active top side 8 of thesemiconductor chip 2 with its contact areas 16. Consequently, on thiscoplanar overall top side 11, access is possible both to the contactareas 16 together of the active top side 8 of the semiconductor chip 2and to the rear side contact 14 of the semiconductor chip 2.

FIG. 9 shows a diagrammatic cross section through the housing plasticscomposition 7 in accordance with FIG. 8, after the application of arewiring layer 3 to the overall top side 11. For this purpose, rewiringlines 25 may be applied directly on the overall top side 11, saidrewiring lines being electrically connected via through contacts 24 orelse directly to external contact areas 21. Arranged between theexternal contact areas 21 is a soldering resist layer 29, which ensuresthat other regions of the rewiring layer 3 are not wetted with thematerial of the external contacts during the application of externalcontacts to the external contact areas 21.

FIG. 10 shows a diagrammatic cross section through a semiconductordevice 1 such as is also shown in FIG. 1 after external contacts 13 havebeen applied to the structure such as is shown in FIG. 9. The flatconductor sheet tape 12 introduced in this method thus makes it possiblefor a semiconductor device 1 which has been produced with the aid of WLPtechnology to be provided with an external contact 13 which iselectrically connected to the rear side contact 14 of the semiconductorchip 2.

FIGS. 11 to 18 show diagrammatic cross sections through components ofsuccessive method steps which are provided during the production of asemiconductor device of the second embodiment of the invention inaccordance with FIG. 2. Components having functions identical to thosein the previous FIG. s are identified by the same reference symbols andare not discussed separately. The method steps that are illustrateddiagrammatically in FIGS. 3 to 6 are also carried out for the productionof the semiconductor device of the second embodiment of the invention,in accordance with FIG. 2.

FIG. 11 shows a diagrammatic cross section through an auxiliary carrier18 with a semiconductor chip 2 and a flat conductor sheet tape 12 knownfrom FIG. 6. In addition, a further, second semiconductor chip 15 hasnow been arranged on the first semiconductor chip 2 and has, with itsrear side 22, a common rear side contact 14 with the underlying firstsemiconductor chip 2. Consequently, by means of the individual flatconductor tape 12, it is possible to produce a contact connection 23arranged in the plane of the adhesive layer 19. Via this contactconnection 23 with the bent-down flat conductor sheet tape 12, it ispossible, for example, to apply a ground potential to the rear sidecontact 14.

FIG. 12 shows a cross section after the positioning of a flat conductorsheet 28 above the active top side 17 of the second semiconductor chip15, the flat conductor sheet 28 having a plurality of flat conductorsheet tapes 12 that are connected to the flat conductor sheet 28 viadesired breaking locations 27.

FIG. 13 shows a diagrammatic cross section through an auxiliary carrier18 with a stack of semiconductor chips 2 and 15 situated thereon, inaccordance with FIG. 12, tools 26 additionally producing an electricalconnection between the contact areas 16 on the active top side 17 of thesecond semiconductor chip 15 and the flat conductor sheet tapes 12.

FIG. 14 shows a diagrammatic cross section through the auxiliary carrier18 with a semiconductor chip stack in accordance with FIG. 13. In FIG.14, the tools 26 have torn the flat conductor sheet tapes 12 away fromthe flat conductor sheet 28 at the desired breaking location. In thiscase, the tools 26 have bent the flat conductor sheet tapes 12 away inarrow direction A toward the adhesive layer 19 in order to form contactconnections 23 and pressed them onto the adhesive layer 19. In thiscase, firstly only the free end of each of the flat conductor sheettapes 12 is fixed on the adhesive layer 19 by means of contact pressurein arrow direction A.

FIG. 15 shows a diagrammatic cross section through the auxiliary carrier18 with applied housing plastics composition 7, which embeds the stackedsemiconductor chips 2 and 15 and the flat conductor sheet tapes 12 intoplastics composition.

FIG. 16 shows a diagrammatic cross section through the plasticscomposition 7 after the auxiliary carrier 18 with the adhesive layer 19as shown in FIG. 15 has been removed from the common top side 11. Thecommon top side 11 now exhibits contact connections 23 both to theactive top side 17 of the second semiconductor chip 15 and to the rearside contact-connection 14 between the two semiconductor chips 2 and 15.Moreover, the overall top side 11 exhibits contact areas 16 of the firstsemiconductor chip 2 on the active top side 8 thereof, so that, from theoverall top side 11, it is possible to access the contact areas 16 ofthe first semiconductor chip 2 and of the second semiconductor chip 15and also the rear side contacts 14 of the stacked semiconductor chips 2and 15.

FIG. 17 shows the diagrammatic cross section in accordance with FIG. 16,but with a rewiring layer 3 on the overall top side 11. Said rewiringlayer 3 corresponds to the rewiring layer 3 of FIG. 9 and is merelysupplemented by connections to the contact areas 16 of the secondsemiconductor chip 15.

FIG. 18 shows a semiconductor device 10 of a second embodiment of theinvention such as is already shown in FIG. 2, so that details of thissecond embodiment of the invention will not be discussed again.

While the invention has been described in detail and with reference tospecific embodiments thereof, it will be apparent to one skilled in theart that various changes and modifications can be made therein withoutdeparting from the spirit and scope thereof. Accordingly, it is intendedthat the present invention covers the modifications and variations ofthis invention provided they come within the scope of the appendedclaims and their equivalents.

LIST OF REFERENCE SYMBOLS

-   1 Semiconductor device-   2 Semiconductor chip-   3 Rewiring layer-   4 Rear side of the semiconductor chip-   5 Edge side of the semiconductor chip-   6 Edge side of the semiconductor chip-   7 Housing plastics composition-   8 Active top side of the semiconductor chip-   9 Top side of the housing plastics composition-   10 Semiconductor device with stacked chip-   11 Overall top side-   12 Flat conductor sheet tape-   13 External contact-   14 Rear side contact-   15 Further or second semiconductor chip-   16 Contact area-   17 Active top side of the second semiconductor chip-   18 Auxiliary carrier-   19 Adhesive layer-   20 Rewiring structure-   21 External contact area-   22 Rear side of the second semiconductor chip-   23 Contact connection-   24 Through contact-   25 Rewiring line-   26 Tool-   27 Desired breaking location-   28 Flat conductor sheet-   29 Soldering resist layer-   A Arrow direction

1. A semiconductor device comprising: a semiconductor chip including anactive top side, a rear side and edge sides, wherein the semiconductorchip including the rear and edge sides of the semiconductor chip areembedded into a housing plastics composition, and the active top side ofthe semiconductor chip is coplanar with a top side of the housingplastics composition so as to define an overall top side; a rewiringlayer carried by the overall top side; and a flat conductor sheet tapearranged within the housing plastics composition and extending from theoverall top side to the rear side of the semiconductor chip, wherein theflat conductor sheet tape is electrically connected to the rear side ofthe semiconductor chip.
 2. The semiconductor device of claim 1, whereinthe flat conductor sheet tape comprises a flexible tape-type plasticsheet coated with copper on one side, and the copper coating iselectrically connected to a rear side contact of the semiconductor chipand to the rewiring layer.
 3. The semiconductor device of claim 1,wherein the flat conductor sheet tape comprises a metal sheet.
 4. Thesemiconductor device of claim 1, wherein the flat conductor sheet tapeis electrically connected to an external contact of the semiconductordevice via the rewiring layer.
 5. The semiconductor device of claim 1,wherein a further semiconductor chip is arranged on the rear side ofthe semiconductor chip, and the further semiconductor chip is completelyembedded in the housing plastics composition.
 6. The semiconductordevice of claim 5, wherein a plurality of flat conductor sheet tapesextend from contact areas disposed on an active top side of the furthersemiconductor chip to the overall top side of the semiconductor device.7. The semiconductor device of claim 1, wherein the rewiring layer isadjacent the active top side of the semiconductor chip.
 8. Thesemiconductor device of claim 1, wherein the semiconductor chip includescontact areas disposed on the active top side of the semiconductor chip,and the contact areas are connected to rewiring lines of the rewiringlayer.